AUIRFR5410 Datasheet - International Rectifier

AUIRFR5410 Power MOSFET

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs .

AUIRFR5410 Features

* AUIRFR5410 HEXFET® Power MOSFET D

* Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoH

AUIRFR5410_InternationalRectifier.pdf