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AUIRFR5410 Power MOSFET

AUIRFR5410 Description

PD - 96344 AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to a.

AUIRFR5410 Features

* AUIRFR5410 HEXFET® Power MOSFET D
* Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoH

AUIRFR5410 Applications

* this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an

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