Datasheet Details
- Part number
- AUIRLR120N
- Manufacturer
- International Rectifier
- File Size
- 271.85 KB
- Datasheet
- AUIRLR120N-InternationalRectifier.pdf
- Description
- Power MOSFET
AUIRLR120N Description
PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D * * * * * * * *AUIRLR120N Features
* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D. U. T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Charge IG ID Current SampAUIRLR120N Applications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
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