AUIRLR120N - Power MOSFET
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel
AUIRLR120N Features
* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Charge IG ID Current Samp
