AUIRLR120N Datasheet - International Rectifier

AUIRLR120N Power MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR120N Features

* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Charge IG ID Current Samp

AUIRLR120N-InternationalRectifier.pdf