Datasheet Specifications
- Part number
- AUIRLR120N
- Manufacturer
- International Rectifier
- File Size
- 271.85 KB
- Datasheet
- AUIRLR120N-InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D * * * * * * * *
Features
* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D. U. T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Charge IG ID Current SampApplications
* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremeAUIRLR120N Distributors
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