AUIRLR120N

Power MOSFET

International Rectifier

AUIRLR120N Features

* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Charge IG ID Current Samp

AUIRLR120N General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR120N Datasheet (271.85 KB)

AUIRLR120N Datasheet Preview — Preview of AUIRLR120N PDF

Datasheet Details

Part number:

AUIRLR120N

Manufacturer:

International Rectifier

File Size:

271.85 KB

Description:

Power mosfet.
PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D

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AUIRLR120N Power MOSFET International Rectifier

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AUIRLR120N Features

AUIRLR120N General Description

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AUIRLR120N Distributor