AUIRLR2703 Datasheet - International Rectifier

AUIRLR2703, Power MOSFET

AUTOMOTIVEGRADE PD - 97620 AUIRLR2703 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * Dy.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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AUIRLR2703-InternationalRectifier.pdf

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Datasheet Details

Part number:

AUIRLR2703

Manufacturer:

International Rectifier

File Size:

267.07 KB

Description:

Power MOSFET

Features

* nclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 160 I D TOP 5.7A 9.9A BOTTOM 14A 120 80 40 0 VDD = 15V A 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped In

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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AUIRLR2703 Power MOSFET International Rectifier

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