AUIRLU2905, AUIRLR2905 Datasheet - International Rectifier

AUIRLU2905, AUIRLR2905, HEXFET Power MOSFET

AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 * Advanced Planar Technology * Logic-Level Gate Drive * Low On-Resistance * D.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

Features

* J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Current Regulator Same Type as D. U. T. 50K 12V .2F .3F D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13a. Basic Gate

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

AUIRLR2905-InternationalRectifier.pdf