Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG QGD
Charge
Current Regulator Same Type as D. U. T. 50K
12V .2F
.3F
D. U. T. + -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6 www. irf. com © 2012 International Rectifier
June 6, 2012
AUIRLR/U2905
D. U. T
+
-
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Con.