AUIRLU2905 Datasheet, Mosfet, International Rectifier

AUIRLU2905 Features

• Mosfet VGS = 0V A 0.8 1.2 1.6 2.0 2.4 VSD , Source-to-Drain Voltage (V) 100 10μs 100μs 10 1ms TC = 25°C STJing=le 175°C Pulse 1 10ms A 1 10 100 VDS , Drain-to-Source Voltage (V) Fig

PDF File Details

Part number:

AUIRLU2905

Manufacturer:

International Rectifier

File Size:

246.27kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techn

AUIRLU2905 Application

• Applications this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

TAGS

AUIRLU2905

International Rectifier

📁 Related Datasheet

AUIRLU2905 - Power MOSFET (Infineon)
  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating.

AUIRLU024N - Power MOSFET (Infineon)
  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temper.

AUIRLU024N - Power MOSFET (International Rectifier)
PD- 96348 AUTOMOTIVE GRADE Features l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance .

AUIRLU024Z - Power MOSFET (Infineon)
  AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Re.

AUIRLU024Z - Power MOSFET (International Rectifier)
AUTOMOTIVE GRADE PD - 97753 AUIRLR024Z AUIRLU024Z Features ● Logic Level ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating .

AUIRLU3110Z - Power MOSFET (International Rectifier)
AUTOMOTIVE GRADE PD - 96369 AUIRLR3110Z AUIRLU3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temp.

AUIRLU3114Z - Power MOSFET (Infineon)
  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Swi.

AUIRLU3114Z - Power MOSFET (International Rectifier)
AUTOMOTIVE GRADE PD - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C O.

AUIRL1404L - Power MOSFET (Infineon)
  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temper.

AUIRL1404L - Power MOSFET (International Rectifier)
AUTOMOTIVE GRADE Features l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperat.