F3710S
International Rectifier
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irf3710s. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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F3710 - N-Channel MOSFET
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F3710-VB Datasheet
N-Channel 100-V (D-S) MOSFET
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PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.017 at VGS = 10 V
ID (A.
F3710S - Power MOSFET
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F3710S-VB
F3710S-VB Datasheet
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 .
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F3711S-VB
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PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 at.
F3711S - IRF3711S
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PD- 94062B
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Indu.
F3707 - N-Channel MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V.
F3709ZS - N-Channel MOSFET
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F3709ZS-VB Datasheet
N-Channel 30-V (D-S) MOSFET
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PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 .
F3002 - RF POWER VDMOS TRANSISTOR
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polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
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F3007S-VB Datasheet
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PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuratio.
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