* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested D G GD S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Sour
F3707
VBsemi
309.20 KB
N-channel mosfet.
F3707-VB
F3707-VB Datasheet
N-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V.
📁 Related Datasheet
F3709ZS - N-Channel MOSFET
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F3709ZS-VB Datasheet
N-Channel 30-V (D-S) MOSFET
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PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 .
F3710 - N-Channel MOSFET
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PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
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0.017 at VGS = 10 V
ID (A.
F3710S - IRF3710S
(International Rectifier)
.DataSheet.co.kr
PD -91310C
IRF3710S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3710S) Low-profile through.
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 .
F3711S - N-Channel MOSFET
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F3711S-VB
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PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 at.
F3711S - IRF3711S
(International Rectifier)
..
PD- 94062B
SMPS MOSFET
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Indu.
F3002 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F3003 - Tube
(CSF)
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