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F7313 Power MOSFET

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Description

PD - 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Descriptio.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
F7313
Manufacturer
International Rectifier
File Size
213.47 KB
Datasheet
F7313_InternationalRectifier.pdf
Description
Power MOSFET

Applications

* IRF7313PbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.029Ω Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applicatio

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