F7338 Datasheet - International Rectifier

F7338 IRF7338

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has.

F7338 Features

* imum Avalanche Energy Vs. Drain Current 8 www.irf.com www.DataSheet4U.com P-Channel 800 IRF7338 ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ci

F7338_InternationalRectifier.pdf