FU9024N Datasheet - International Rectifier

FU9024N IRFU9024N

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve www.DataSheet4U.com extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr.

FU9024N Features

* 19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) www.DataSheet4U.com 1.02 (.040) 1.64 (.025) 1 2 3 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. LEA D AS SIG NME NT S 1 - G AT E 2 - DRA IN 3 - S OUR CE 4 - DRA IN -B 1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.

FU9024N_InternationalRectifier.pdf