FU9N20D Datasheet - International Rectifier

FU9N20D IRFU9N20D

PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR9N20D I-Pak IRFU9N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt.

FU9N20D Features

* A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com www.DataSheet.in IRFR9N20D/IRFU9N20D I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 ( .0 5 0 ) 0 .8 8

FU9N20D_InternationalRectifier.pdf