GB6B60KD - IRGB6B60KD

International Rectifier

Datasheet Details

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

📁 GB6B60KD Similar Datasheet

Other Datasheets by International Rectifier

Published: Dec 17, 2009 |