GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: GP30B120KD-E
Manufacturer: International Rectifier
File Size: 168.17 KB
Datasheet: GP30B120KD-E_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE(on) Non Punch Through (NPT) Technology
* Low Diode VF (1.76V Typical @ 25A & 25°C) www. DataSheet4U. com
* 10 µs Short Circuit Capability
* Square RBSOA
* Ultrasoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient

Applications

* Rugged Transient Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T

GP30B120KD-E Distributors

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GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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