GP30B120KD-E Datasheet, Transistor, International Rectifier

GP30B120KD-E Features

  • Transistor
  • Low VCE(on) Non Punch Through (NPT) Technology
  • Low Diode VF (1.76V Typical @ 25A & 25°C) www.DataSheet4U.com
  • 10 µs Short Circuit Capability
  • Squar

PDF File Details

Part number:

GP30B120KD-E

Manufacturer:

International Rectifier

File Size:

168.17kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

Datasheet Preview: GP30B120KD-E 📥 Download PDF (168.17kb)
Page 2 of GP30B120KD-E Page 3 of GP30B120KD-E

GP30B120KD-E Application

  • Applications
  • Rugged Transient Performance
  • Low EMI
  • Significantly Less Snubber Required
  • Excellent Current Shar

TAGS

GP30B120KD-E
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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Stock and price

Infineon Technologies AG
IGBT NPT 1200V 60A TO-247AD
DigiKey
IRGP30B120KD-EP
0 In Stock
0
Unit Price : $0
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