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GP30B120KD-E - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – GP30B120KD-E

Datasheet Details

Part number	GP30B120KD-E
Manufacturer	International Rectifier
File Size	168.17 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	GP30B120KD-E Datasheet
Additional preview pages of the GP30B120KD-E datasheet.

Product details

Features

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C) www. DataSheet4U. com.
10 µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits.
Benchmark Efficiency for Motor Contro.

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Other Datasheets by International Rectifier

GP30B120KD-EP - INSULATED GATE BIPOLAR TRANSISTOR
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Published: Oct 23, 2008 |