GP30B120KD-E Datasheet - International Rectifier

GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR

GP30B120KD-E Features

* Low VCE(on) Non Punch Through (NPT) Technology

* Low Diode VF (1.76V Typical @ 25A & 25°C) www.DataSheet4U.com

* 10 µs Short Circuit Capability

* Square RBSOA

* Ultrasoft Diode Recovery Characteristics

* Positive VCE(on) Temperature Coefficient

Datasheet Details

GP30B120KD-E

International Rectifier

168.17 KB

Insulated gate bipolar transistor.

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