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GP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR

GP30B120KD-EP Description

IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT .

GP30B120KD-EP Features

* Low VCE(on) Non Punch Through (NPT) Technology
* Low Diode VF (1.76V Typical @ 25A & 25°C)
* 10 μs Short Circuit Capability
* Square RBSOA
* Ultrasoft Diode Recovery Characteristics
* Positive VCE(on) Temperature Coefficient
* Extended Lead T

GP30B120KD-EP Applications

* Rugged Transient Performance
* Low EMI
* Significantly Less Snubber Required
* Excellent Current Sharing in Parallel Operation
* Longer leads for Easier Mounting E GC TO-247AD Base Part Number IRGP30B120KD-EP Package Type TO-247AD Standard Pack Form Tube

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier GP30B120KD-EP-like datasheet