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GP30B120KD-EP

INSULATED GATE BIPOLAR TRANSISTOR

GP30B120KD-EP Features

* Low VCE(on) Non Punch Through (NPT) Technology

* Low Diode VF (1.76V Typical @ 25A & 25°C)

* 10 μs Short Circuit Capability

* Square RBSOA

* Ultrasoft Diode Recovery Characteristics

* Positive VCE(on) Temperature Coefficient

* Extended Lead T

GP30B120KD-EP Datasheet (293.69 KB)

Preview of GP30B120KD-EP PDF

Datasheet Details

Part number:

GP30B120KD-EP

Manufacturer:

International Rectifier

File Size:

293.69 KB

Description:

Insulated gate bipolar transistor.

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TAGS

GP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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