GP30B120KD-EP Datasheet, Transistor, International Rectifier

GP30B120KD-EP Features

• Transistor
• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 μs Short Circuit Capability
• Square RBSOA
• Ul

PDF File Details

Part number:

GP30B120KD-EP

Manufacturer:

International Rectifier

File Size:

293.69kb

Download:

📄 Datasheet

Description:

Insulated gate bipolar transistor.

GP30B120KD-EP Application

• Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Shar

TAGS

GP30B120KD-EP

International Rectifier

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