IRF3710ZGPbF Datasheet, Mosfet, International Rectifier

IRF3710ZGPbF Features

• Mosfet l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Ha

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Part number:

IRF3710ZGPbF

Manufacturer:

International Rectifier

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275.05kb

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📄 Datasheet

Description:

Power mosfet. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addition

IRF3710ZGPbF Application

• Applications G IRF3710ZGPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ ID = 59A S TO-220AB IRF3710ZGPbF Absolute Maximum Ratings Paramet

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IRF3710ZGPbF

International Rectifier

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