IRF3710ZS Datasheet, Mosfet, International Rectifier

IRF3710ZS Features

• Mosfet l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Desc

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IRF3710ZS

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International Rectifier

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📄 Datasheet

Description:

Hexfet power mosfet. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addition

IRF3710ZS Application

• Applications IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB D2Pak TO-262 IRF

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IRF3710ZS

International Rectifier

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