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IRF4905S - Power MOSFET

IRF4905S Description

PD - 97034 IRF4905SPbF IRF4905LPbF .
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

IRF4905S Applications

* G D HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 20mΩ ID = -42A S D S D G D2Pak IRF4905SPbF S D G TO-262 IRF4905LPbF Absolute Maximum Ratings G Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Sili

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