IRF4905SPBF
Features
O O O O O O
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free
VDSS = -55V RDS(on) = 20mΩ
ID = -42A
Description
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
D2Pak IRF4905SPb F
TO-262 IRF4905LPb F
Absolute Maximum Ratings
Parameter
Gate
Drain
Max.
-70 -44 -42 -280 170 1.3 ± 20
Source
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation...
