IRF540NLPbF
International Rectifier
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Power mosfet. G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
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IRF540NL - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
.
IRF540NL - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
IRF540N - Power MOSFET
(Fairchild Semiconductor)
Data Sheet
January 2002
IRF540N
33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Symbol
DRAIN (FLANGE).
IRF540N - Power MOSFET
(International Rectifier)
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
G
Fully Avalanche Rated
Lea.
IRF540N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
IRF540NPbF - Power MOSFET
(International Rectifier)
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
De.
IRF540NPBF - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF540NPBF
·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(.
IRF540NS - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
.
IRF540NS - N-Channel MOSFET
(Kexin)
SMD Type
N-Channel MOSFET IRF540NS (KRF540NS)
MOSFET
■ Features
● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) ● Fast Switch.
IRF540NS - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRF540NS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.