IRF540NPbF Datasheet - International Rectifier

Power MOSFET

IRF540NPbF Features

* 027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) NOTES: 2X 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking

IRF540NPbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF540NPbF Datasheet (142.74 KB)

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IRF540NPbF

Manufacturer:

International Rectifier

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142.74 KB

Description:

Power mosfet.
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free De.

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IRF540NPbF Power MOSFET International Rectifier

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IRF540NPbF Features

IRF540NPbF General Description

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