* 05 32 .00 40 .01 4 .0075 .189 .15 0 M AX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM ET ER S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 MA X 1. 75 0. 25 0. 46 0.25 4.98 3. 99 A 6 5 H 0 . 2 5 ( .0 1 0 ) M A M 5 8 E -A - 7 A1 B C D E e e1 H A 1 2 3 4 e 6X e1 θ K x 45 ° .05 0 BA SIC .02 5
IRF7421D1 Datasheet (145.35 KB)
IRF7421D1
International Rectifier
145.35 KB
Mosfet & schottky diode.
www.DataSheet4U.com
PD 9.1411
PRELIMINARY
l l l l
IRF7421D1
MOSFET & Schottky Diode
8
Co-packaged Power MOSFET and Schottky Diode Ideal For Synchr.
📁 Related Datasheet
IRF7421D1PBF - FETKY MOSFET / Schottky Diode
(International Rectifier)
..
PD- 95304
IRF7421D1PbF
FETKYä MOSFET / Schottky Diode
l l l l l
Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For S.
IRF742 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF742
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Vol.
IRF742 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF742 - N-Channel Power MOSFETs
(ART CHIP)
IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MO.
IRF742 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[F~lf
FIELD EFFECT POWER TRANSISTOR
IRF742,743
SAMPERES 400, 350 VOLTS
ROS(ON) =O.SO n
This series of N-Channel Enhancement-mode Power MOSFETs ut.
IRF7420 - HEXFET Power MOSFET
(International Rectifier)
..
PD - 94278
IRF7420
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel.
IRF7420PbF - HEXFET Power MOSFET
(International Rectifier)
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free
VDSS
-12V
PD - 95633A
IRF7420PbF
HEXFET® Power M.
IRF7420PBF-1 - HEXFET Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical) ID
(@TA = 25°C)
-12 V 14 mΩ
17.5 mΩ
26 38 -11.5
.
