IRF7422D2PBF
International Rectifier
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Mosfet & schottky diode.
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IRF7422D2 - MOSFET & Schottky Diode
(International Rectifier)
PD- 91412M
IRF7422D2
l Co-packaged HEXFET® Power MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications l P-Channel HEXFET l Low VF Schot.
IRF742 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF742
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Vol.
IRF742 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF742 - N-Channel Power MOSFETs
(ART CHIP)
IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MO.
IRF742 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[F~lf
FIELD EFFECT POWER TRANSISTOR
IRF742,743
SAMPERES 400, 350 VOLTS
ROS(ON) =O.SO n
This series of N-Channel Enhancement-mode Power MOSFETs ut.
IRF7420 - HEXFET Power MOSFET
(International Rectifier)
..
PD - 94278
IRF7420
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel.
IRF7420PbF - HEXFET Power MOSFET
(International Rectifier)
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free
VDSS
-12V
PD - 95633A
IRF7420PbF
HEXFET® Power M.
IRF7420PBF-1 - HEXFET Power MOSFET
(International Rectifier)
VDS RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical) ID
(@TA = 25°C)
-12 V 14 mΩ
17.5 mΩ
26 38 -11.5
.
IRF7421D1 - MOSFET & Schottky Diode
(International Rectifier)
..
PD 9.1411
PRELIMINARY
l l l l
IRF7421D1
MOSFET & Schottky Diode
8
Co-packaged Power MOSFET and Schottky Diode Ideal For Synchr.
IRF7421D1PBF - FETKY MOSFET / Schottky Diode
(International Rectifier)
..
PD- 95304
IRF7421D1PbF
FETKYä MOSFET / Schottky Diode
l l l l l
Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For S.
