IRF7478 Datasheet - International Rectifier

IRF7478 Power MOSFET

PD- 94055A SMPS MOSFET Applications High frequency DC-DC converters IRF7478 HEXFET® Power MOSFET RDS(on) max (mΩ) 26@VGS = 10V 30@VGS = 4.5V l VDSS 60V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = .

IRF7478 Features

* opper board Coss eff. is a fixed capacitance that gives the same charging time ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25°C, L = 16mH Data and specifications subject to change without notice. This product has been d

IRF7478 Datasheet (209.14 KB)