Datasheet4U Logo Datasheet4U.com

IRF9310PBF-1 - Power MOSFET

IRF9310PBF-1 Description

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 4.6 mΩ 6.8 58 nC -20 A IRF9310PbF-1 HEXFET® Power MOSFET.

IRF9310PBF-1 Features

* Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF9310PbF-1 Package Typ

📥 Download Datasheet

Preview of IRF9310PBF-1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF9358 - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9358PbF - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9388PbF - Power MOSFET (Infineon)
  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF9310PBF-1-like datasheet