IRFB61N15D Datasheet (International Rectifier)

IRFB61N15D, Power MOSFET

PD- 94207 SMPS MOSFET IRFB61N15D HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC

IRFB61N15D Features

* max. junction temperature.

* ISD ≤ 37A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 0.98mH RG = 25Ω, IA