IRFB260N - N-Channel MOSFET
IRFB260N Features
* Static drain-source on-resistance: RDS(on) ≤40mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fully Characterized Avalanche Voltage and Current
* ABSOL
