IRFB260NPBF Datasheet - International Rectifier

IRFB260NPBF HEXFET Power MOSFET

PD - 95473 SMPS MOSFET IRFB260NPbF l l HEXFET® Power MOSFET Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous .

IRFB260NPBF Features

* /µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

* Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. This product has been designed and qualified

IRFB260NPBF Datasheet (169.97 KB)