IRFB260N Datasheet - International Rectifier

IRFB260N Power MOSFET

PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, .

IRFB260N Features

* ISD ≤ 34, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

* Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. This product has

IRFB260N_InternationalRectifier.pdf