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IRFB260 Datasheet - International Rectifier

IRFB260 - Power MOSFET

PD - 94270 SMPS MOSFET IRFB260N HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.040Ω ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current,

IRFB260 Features

* ISD ≤ 34, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

* Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. This product has

IRFB260_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFB260

Manufacturer:

International Rectifier

File Size:

90.71 KB

Description:

Power mosfet.

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