IRFB3004 Datasheet - INCHANGE

IRFB3004, N-Channel MOSFET

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 *

Features

* Static drain-source on-resistance: RDS(on) ≤1.75mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* Hard Switched and High Frequency Circuits
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 340

IRFB3004-INCHANGE.pdf