IRFB3006GPBF Datasheet - International Rectifier

IRFB3006GPBF, Power MOSFET

PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET

Features

* ves , Figures 14, 15: (For further info, see AN-1005 at www.
irf.
com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax.
This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not excee

Applications

* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/

IRFB3006GPBF_InternationalRectifier.pdf