IRFB3006GPBF Datasheet - International Rectifier

IRFB3006GPBF Power MOSFET

PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.1m: 2.5m: 270.

IRFB3006GPBF Features

* ves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not excee

IRFB3006GPBF Datasheet (311.15 KB)