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IRFB3207ZG - N-Channel MOSFET

IRFB3207ZG Description

isc N-Channel MOSFET Transistor IRFB3207ZG，IIRFB3207ZG *.

IRFB3207ZG Features

* Static drain-source on-resistance: RDS(on) ≤4.1mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB3207ZG Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRFB3207ZG
Manufacturer
INCHANGE
File Size
240.95 KB
Datasheet
IRFB3207ZG-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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