IRFB3207 Datasheet - International Rectifier

IRFB3207 Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96893C IRFB3207 IRFS3207 IRFSL3207 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 3.765mV: 4.5m: 180A GDS TO-220A.

IRFB3207 Features

* ion in Avalanche is allowed as long as neitherTjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase dur

IRFB3207 Datasheet (373.35 KB)