IRFB3307 - N-Channel MOSFET

INCHANGE

IRFB3307 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307， IIRFB3307 *.

IRFB3307 Features

* Static drain-source on-resistance: RDS(on) ≤6.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB3307 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 510 PD Total Dissipation @TC=25℃ 250 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

IRFB3307 Datasheet Preview — Preview of IRFB3307 PDF

Datasheet Details

Part number: IRFB3307
Manufacturer: INCHANGE
File Size: 241.23 KB
Datasheet: IRFB3307-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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