Datasheet Details
- Part number
- IRFB3307
- Manufacturer
- INCHANGE
- File Size
- 241.23 KB
- Datasheet
- IRFB3307-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFB3307 Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307, IIRFB3307 *.
IRFB3307 Features
* Static drain-source on-resistance:
RDS(on) ≤6.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRFB3307 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
510
PD
Total Dissipation @TC=25℃
250
Tj
Max. Operating Junction Temperature
175
Tstg
Storage T
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