Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET D VDSS RDS(on) typ.
75V 5.0m: :G max.
6.3m S ID 120A GDS TO-220AB IRFB3307P
IRFB3307PbF Features
* ture (°C) Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validate
IRFB3307PbF-InternationalRectifier.pdf
Datasheet Details
IRFB3307PbF
International Rectifier
328.14 KB
Hexfet power mosfet.
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