IRFB3307PbF Datasheet - International Rectifier

IRFB3307PbF HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 5.0m: :G max. 6.3m S ID 120A GDS TO-220AB IRFB3307P.

IRFB3307PbF Features

* ture (°C) Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validate

IRFB3307PbF Datasheet (328.14 KB)