IRFB3006 Datasheet - INCHANGE

IRFB3006, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3006， IIRFB3006 *

Features

* Static drain-source on-resistance: RDS(on) ≤2.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1080 PD Total Dissipation @TC=25℃ 375 Tj Max.
Operating Junction Temperature 175 Tstg Storage

IRFB3006-INCHANGE.pdf