IRFB3207 - N-Channel MOSFET

INCHANGE

IRFB3207 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3207， IIRFB3207 *.

IRFB3207 Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB3207 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 720 PD Total Dissipation @TC=25℃ 330 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

IRFB3207 Datasheet Preview — Preview of IRFB3207 PDF

Datasheet Details

Part number: IRFB3207
Manufacturer: INCHANGE
File Size: 241.64 KB
Datasheet: IRFB3207-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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IRFB3207 Stock/Price