IRFB3206PBF Datasheet - International Rectifier

IRFB3206PBF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 2.4m: 3.0m: cG ID (Silicon Lim.

IRFB3206PBF Features

* . Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, as

IRFB3206PBF_InternationalRectifier.pdf