IRFB3306 - N-Channel MOSFET

INCHANGE

IRFB3306 Datasheet Preview — Preview of IRFB3306 PDF

Datasheet Details

Part number	IRFB3306
Manufacturer	INCHANGE
File Size	241.01 KB
Description	N-Channel MOSFET
Datasheet	IRFB3306-INCHANGE.pdf

IRFB3306 Product details

Description

High efficiency synchronous rectification in SMPS Uninterrruptible power supply High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 620 PD Total Dissipation @TC=25℃ 230 Tj Max.Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL

Features

br>.
Static drain-source on-resistance: RDS(on) ≤4.2mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IRFB3306 Similar Datasheet

IRFB3306GPbF - Power MOSFET (International Rectifier)
IRFB3306PBF - Power MOSFET (International Rectifier)
IRFB3307 - HEXFET Power MOSFET (International Rectifier)
IRFB3307PbF - HEXFET Power MOSFET (International Rectifier)
IRFB3307ZPBF - HEXFET Power MOSFET (International Rectifier)
IRFB33N15D - Power MOSFET (International Rectifier)
IRFB33N15DPbF - Power MOSFET (International Rectifier)
IRFB3004GPbF - Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRFB3307Z - N-Channel MOSFET
IRFB3004 - N-Channel MOSFET
IRFB3006 - N-Channel MOSFET
IRFB3077 - N-Channel MOSFET
IRFB31N20D - N-Channel MOSFET
IRFB3206 - N-Channel MOSFET

Published: Oct 12, 2020 |