IRFB3307ZPBF Datasheet - International Rectifier

IRFB3307ZPBF HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 4.6mΩ cmax. 5.8mΩ G ID (Silicon Limited) 128A S ID (Pack.

IRFB3307ZPBF Features

* Duty Cycle 125 ID = 75A 100 75 50 25 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part

IRFB3307ZPBF Datasheet (330.01 KB)