Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ.
4.6mΩ cmax.
5.8mΩ G ID (Silicon Limited) 128A S ID (Pack
IRFB3307ZPBF Features
* Duty Cycle 125 ID = 75A 100 75 50 25 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part
IRFB3307ZPBF_InternationalRectifier.pdf
Datasheet Details
IRFB3307ZPBF
International Rectifier
330.01 KB
Hexfet power mosfet.
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