IRFB3306GPbF Datasheet - International Rectifier

IRFB3306GPbF Power MOSFET

PD - 96211 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free IRFB3306GPbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 3.3m: 4.2m: c160A S ID (Package L.

IRFB3306GPbF Features

* Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during ava

IRFB3306GPbF Datasheet (289.39 KB)