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IRFB3256PbF Datasheet - International Rectifier

IRFB3256PbF HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97727 IRFB3256PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.7mΩ 3.4mΩ 206A S ID (Package Limited) 75A D D.

IRFB3256PbF Features

* ower dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time i

IRFB3256PbF Datasheet (264.31 KB)