Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D2Pak IRFBE30S TO-262 IRFBE30L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 2
IRFBE30LPBF_InternationalRectifier.pdf
Datasheet Details
IRFBE30SPBF, IRFBE30LPBF
International Rectifier
614.09 KB
Hexfet power mosfet.
This datasheet PDF includes multiple part numbers: IRFBE30SPBF, IRFBE30LPBF.
Please refer to the document for exact specifications by model.
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