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IRFH4234PBF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers

Key Features

  • Low Charge (typical 8.2 nC) Low RDSon (.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 4.6 7.3 8.2 60 V m nC A   Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low Charge (typical 8.2 nC) Low RDSon (<4.6 m) Low Thermal Resistance to PCB (<4.6 °C/W) Low Profile (<0.