IRFH4255DPBF Datasheet | International Rectifier

Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10n C typical) Low RDSON synchronous MOSFET (<2.10m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 Ro HS pliant, Halogen-Free MSL1, Industrial Qualification DUAL PQFN 5X6 mm Benefits Increased power density Lower switching losses results in Lower conduction losses  Lower Switching Losses Environmentally friendlier Increased reliability Base part number   IRFH4255DPb F Package Type   Dual PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel Orderable Part Number IRFH4255DTRPb F Absolute Maximum Ratings    VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Q1 Max. Q2 Max. ± 20   64 105 51 84 30 120 31 20 0.25 30 420 38 24 0.30 -55 to + 150 Units V A  W  W/°C °C   Thermal Resistance Parameter RJC (Bottom) Junction-to-Case - RJC (Top) Junction-to-Case - RJA Junction-to-Ambient...