IRFL024ZPbF Datasheet - International Rectifier

IRFL024ZPbF, Power MOSFET

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Applications

* Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C iContinuous Drain Current, VGS @ 10V (Silicon Limited) iContinuous Drain Current, VGS @ 10V Pulsed Drain Current iPower Dissipation jPower Dissipation iLinear Derating Factor VGS Gate-to-Source Vo

IRFL024ZPbF-InternationalRectifier.pdf