IRFP3415 Datasheet - International Rectifier

IRFP3415, Power MOSFET

www.DataSheet4U.com PD - 93962A IRFP3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperatur.
Fifth Generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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IRFP3415_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFP3415

Manufacturer:

International Rectifier

File Size:

660.82 KB

Description:

Power MOSFET

Features

* ) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2

Applications

* The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. HEXFET® www. DataSheet4U. com TO-247AC Parameter Max. 43 30 150

IRFP3415 Distributors

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