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IRFP3415PBF Power MOSFET

IRFP3415PBF Description

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free .
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per.

IRFP3415PBF Applications

* The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM

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Power MOSFET International Rectifier
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