IRFS3107PbF Datasheet - International Rectifier

IRFS3107PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 2.5m: 3.0m: ID (Silicon Limited) 230A c S ID (Package Li.

IRFS3107PbF Features

* 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. Th

IRFS3107PbF Datasheet (368.17 KB)