IRFY11N50CMA Datasheet - International Rectifier

IRFY11N50CMA HEXFET POWER MOSFET THRU-HOLE

www.DataSheet4U.com PD - 94167A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number IRFY11N50CMA BVDSS 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the .

IRFY11N50CMA Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRFY11N50CMA_InternationalRectifier.pdf