www.DataSheet4U.com PD - 94167A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number IRFY11N50CMA BVDSS 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the
IRFY11N50CMA Features
* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo
IRFY11N50CMA_InternationalRectifier.pdf
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IRFY11N50CMA
International Rectifier
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Hexfet power mosfet thru-hole.
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