IRFZ34E Datasheet - International Rectifier

Power MOSFET

IRFZ34E General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides t.

IRFZ34E Datasheet (120.73 KB)

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Part number:

IRFZ34E

Manufacturer:

International Rectifier

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120.73 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Ease of Parall.

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IRFZ34E Power MOSFET International Rectifier

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IRFZ34E General Description

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